View IRFPS40N50L_4371725.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

IRFPS40N50L, SiHFPS40N50L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 380 80 190 Single
D
FEATURES
500 0.087
* Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications * Lower Gate Charge Results in Simpler Drive Requirements
Available
RoHS*
COMPLIANT
* Enhanced dV/dt Capabilities Offer Improved Ruggedness * Higher Gate Voltage Threshold Offers Improved Noise Immunity * Lead (Pb)-free Available
SUPER-247TM
APPLICATIONS
G S D G S N-Channel MOSFET
* Zero Voltage Switching SMPS * Telecom and Server Power Supplies * Uninterruptible Power Supplies * Motor Control Applications
ORDERING INFORMATION
Package Lead (Pb)-free SnPb SUPER-247TM IRFPS40N50LPbF SiHFPS40N50L-E3 IRFPS40N50L SiHFPS40N50L
ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM EAS IAR EAR TC = 25 C PD dV/dt TJ, Tstg for 10 s LIMIT 500 30 46 29 180 4.3 920 46 54 540 34 - 55 to + 150 300d W/C mJ A mJ W V/ns C A UNIT V
Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 C, L = 0.86 mH, RG = 25 , IAS = 46 A (see fig. 12). c. ISD 46 A, dI/dt 550 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91260 S-81367-Rev. B, 21-Jul-08 www.vishay.com 1
IRFPS40N50L, SiHFPS40N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambienta Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain)a Note a. Rth is measured at TJ approximately 90 C. SYMBOL RthJA RthCS RthJC TYP. 0.24 MAX. 40 0.23 C/W UNIT
SPECIFICATIONS TJ = 25 C, unless otherwise noted
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Effective Output Capacitance (Energy Related) Total Gate Charge Gate-Source Charge Gate-Drain Charge Internal Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Current IS ISM VSD trr Qrr IRRM MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Coss Coss eff. Coss eff. (ER) Qg Qgs Qgd RG td(on) tr td(off) tf
TEST CONDITIONS VGS = 0 V, ID = 250 A Reference to 25 C, ID = 1 mA VDS = VGS, ID = 250 A VGS = 30 V VDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V, TJ = 125 C VGS = 10 V ID = 28 Ab VDS = 50 V, ID = 46 A
MIN. 500 3.0 21 -
TYP. 0.60 0.087 8110 960 130 11200 240 440 310 0.90 27 170 50 69
MAX. 5.0 100 50 2.0 0.100 380 80 190 -
UNIT V V/C V nA A mA S
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VDS = 1.0 V , f = 1.0 MHz VDS = 400 V , f = 1.0 MHz VGS = 0 V VDS = 0 V to 400 Vc
pF
-
VGS = 10 V
ID = 46 A, VDS = 400 V, see fig. 7 and 15b
-
nC
f = 1 MHz, open drain VDD = 250 V, ID = 46 A, RG = 0.85 , VGS = 10 V, see fig. 14a and 14bb
ns
-
170 220 705 1.3 9.0
46 A 180 1.5 250 330 1060 2.0 V ns nC A
G
S
TJ = 25 C, IS = 46 A, VGS = 0 Vb TJ = 25 C, IF = 46 A TJ = 125 C, dI/dt = 100 A/sb TJ = 25 C, IS = 46 A, VGS = 0 Vb TJ = 125 C, dI/dt = 100 TJ = 25 C A/sb
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 400 s; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80 % VDS. www.vishay.com 2 Document Number: 91260 S-81367-Rev. B, 21-Jul-08
IRFPS40N50L, SiHFPS40N50L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
100
TJ = 150 C
10
10
1
TJ = 25 C
1
4.5V
0.1
0.01 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
0.1
V DS= 50V 20s PULSE WIDTH 4 5 6 7 8 9 10 11
VDS , Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
VGS , Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
TOP
RDS(on) , Drain-to-Source On Resistance (Normalized)
1000
I D , Drain-to-Source Current (A)
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM4.5V
3.0
ID = 47A
2.5
2.0
10
4.5V
1.5
1.0
1
0.5
0.1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VDS , Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
TJ , Junction Temperature ( C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91260 S-81367-Rev. B, 21-Jul-08
www.vishay.com 3
IRFPS40N50L, SiHFPS40N50L
Vishay Siliconix
20
1000000
VGS , Gate-to-Source Voltage (V)
100000
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
ID = 47A V DS= 400V V DS= 250V V DS= 100V
C, Capacitance(pF)
15
10000
Ciss
10
1000
Coss
100
Crss
5
10 1 10 100 1000
0 0 100 200 300 400
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
QG , Total Gate Charge (nC)
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
40 35 30
1000
ISD , Reverse Drain Current (A)
100
Energy (J)
25 20 15 10 5 0 0 100 200 300 400 500 600
TJ = 150 C
10
TJ = 25 C
1
0.1 0.2
V GS = 0 V
0.7 1.2 1.7 2.2
VDS, Drain-to-Source Voltage (V) Fig. 6 - Typical Output Capacitance Stored Energy vs. VDS
VSD ,Source-to-Drain Voltage (V)
Fig. 8 - Typical Source Drain Diode Forward Voltage
www.vishay.com 4
Document Number: 91260 S-81367-Rev. B, 21-Jul-08
IRFPS40N50L, SiHFPS40N50L
Vishay Siliconix
50
VGS
VDS
RD
D.U.T. + - VDD
40
RG
ID , Drain Current (A)
10 V
30
Pulse width 1 s Duty factor 0.1 %
Fig. 10a - Switching Time Test Circuit
20
VDS 90 %
10
0
25
50
75
100
125
150
TC , Case Temperature ( C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
1
10 % VGS td(on) tr td(off) tf
Fig. 10b - Switching Time Waveforms
Thermal Response(Z thJC )
0.1
D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.01
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
15 V
VDS tp
VDS
L
Driver
RG 20 V tp
D.U.T. IAS 0.01
+ A - VDD
IAS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91260 S-81367-Rev. B, 21-Jul-08
www.vishay.com 5
IRFPS40N50L, SiHFPS40N50L
Vishay Siliconix
1000
OPERATION IN THIS AREA LIMITED BY RDS(on)
Current regulator Same type as D.U.T.
50 k
12 V
ID , Drain Current (A)
100
10us
0.2 F
0.3 F
100us
D.U.T.
+ -
VDS
10
1ms
VGS
3 mA
1
TC = 25 C TJ = 150 C Single Pulse
10 100
10ms
IG ID Current sampling resistors
100
VDS , Drain-to-Source Voltage (V)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Gate Charge Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
2000
TOP BOTTOM
ID 21A 30A 46A
QG
1500
VGS QGS
1000
QGD
VG
500
Charge
0 25 50 75 100 125 150
Fig. 12d - Maximum Safe Operating Area
Starting T , Junction Temperature( C) J
Fig. 13b - Basic Gate Charge Waveform
www.vishay.com 6
Document Number: 91260 S-81367-Rev. B, 21-Jul-08
IRFPS40N50L, SiHFPS40N50L
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T
+
Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer
+ +
-
RG
* * * *
dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test
+ VDD
Driver gate drive P.W. Period D=
P.W. Period VGS = 10 V*
D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt
VDD
Re-applied voltage Inductor current
Body diode forward drop
Ripple 5 %
ISD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91260.
Document Number: 91260 S-81367-Rev. B, 21-Jul-08
www.vishay.com 7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
www.vishay.com 1

▲Up To Search▲

Price & Availability of IRFPS40N50L

	To Download IRFPS40N50L Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .